Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

标题
Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier
作者
关键词
-
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 552, Issue -, Pages 423-429
出版商
Elsevier BV
发表日期
2012-11-24
DOI
10.1016/j.jallcom.2012.11.093

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