The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
出版年份 2010 全文链接
标题
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 6, Pages 064506
出版商
AIP Publishing
发表日期
2010-09-18
DOI
10.1063/1.3468376
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