Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

标题
Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
作者
关键词
-
出版物
SENSORS AND ACTUATORS A-PHYSICAL
Volume 185, Issue -, Pages 73-81
出版商
Elsevier BV
发表日期
2012-07-31
DOI
10.1016/j.sna.2012.07.021

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