Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

标题
Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
作者
关键词
-
出版物
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 14, Issue 2, Pages 139-145
出版商
Elsevier BV
发表日期
2011-02-24
DOI
10.1016/j.mssp.2011.01.018

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