High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

标题
High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
作者
关键词
-
出版物
NANO LETTERS
Volume 14, Issue 6, Pages 3594-3601
出版商
American Chemical Society (ACS)
发表日期
2014-05-20
DOI
10.1021/nl501275p

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