Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
出版年份 2017 全文链接
标题
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
作者
关键词
Resistive random access memory (RRAM), Resistive switching device, 3D integration, Selector, Bottom-up fabrication
出版物
JOURNAL OF ELECTROCERAMICS
Volume 39, Issue 1-4, Pages 21-38
出版商
Springer Nature
发表日期
2017-06-24
DOI
10.1007/s10832-017-0095-9
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer
- (2016) Jacopo Frascaroli et al. ACS Applied Materials & Interfaces
- Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density
- (2016) Ahmed Al-Haddad et al. ACS Applied Materials & Interfaces
- Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application
- (2016) Cian Cummins et al. ADVANCED MATERIALS
- Ultrathin AAO Membrane as a Generic Template for Sub-100 nm Nanostructure Fabrication
- (2016) Hossein Robatjazi et al. CHEMISTRY OF MATERIALS
- Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM
- (2016) Jiyong Woo et al. IEEE ELECTRON DEVICE LETTERS
- HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
- (2016) Boubacar Traore et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Interface engineered HfO2-based 3D vertical ReRAM
- (2016) Boris Hudec et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
- (2016) Chuan-Sen Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- 3D resistive RAM cell design for high-density storage class memory—a review
- (2016) Boris Hudec et al. Science China-Information Sciences
- Stack optimization of oxide-based RRAM for fast write speed (
- (2016) C.Y. Chen et al. SOLID-STATE ELECTRONICS
- Two-step cycle for producing multiple anodic aluminum oxide (AAO) films with increasing long-range order
- (2016) E. Choudhary et al. RSC Advances
- Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
- (2016) Ji-Min Song et al. Scientific Reports
- Thickness and Microdomain Orientation of Asymmetric PS-b-PMMA Block Copolymer Films Inside Periodic Gratings
- (2015) Federico Ferrarese Lupi et al. ACS Applied Materials & Interfaces
- Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly
- (2015) Jacopo Frascaroli et al. ACS Nano
- How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
- (2015) Felix Messerschmitt et al. ADVANCED FUNCTIONAL MATERIALS
- Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3Thin Film Devices
- (2015) Christian Lenser et al. ADVANCED FUNCTIONAL MATERIALS
- Physics of the Switching Kinetics in Resistive Memories
- (2015) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Trilayer Tunnel Selectors for Memristor Memory Cells
- (2015) Byung Joon Choi et al. ADVANCED MATERIALS
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
- (2015) Jung Ho Yoon et al. ADVANCED MATERIALS
- Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
- (2015) Liang Zhao et al. APPLIED PHYSICS LETTERS
- Plasma enhanced multistate storage capability of single ZnO nanowire based memory
- (2015) Yunfeng Lai et al. APPLIED PHYSICS LETTERS
- Analysis of Partial Bias Schemes for the Writing of Crossbar Memory Arrays
- (2015) An Chen IEEE TRANSACTIONS ON ELECTRON DEVICES
- HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
- (2015) Daniele Garbin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Directed self-assembly of block copolymers for nanocircuitry fabrication
- (2015) M.A. Morris MICROELECTRONIC ENGINEERING
- A General Design Strategy for Block Copolymer Directed Self-Assembly Patterning of Integrated Circuits Contact Holes using an Alphabet Approach
- (2015) He Yi et al. NANO LETTERS
- Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2substrates
- (2015) Jacopo Frascaroli et al. NANOTECHNOLOGY
- Reconfigurable Memristive Device Technologies
- (2015) Arthur H. Edwards et al. PROCEEDINGS OF THE IEEE
- Phase-Change and Redox-Based Resistive Switching Memories
- (2015) Dirk J. Wouters et al. PROCEEDINGS OF THE IEEE
- All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
- (2015) Yoon Cheol Bae et al. Scientific Reports
- Improved thermal stability and retention properties of Cu–Te based CBRAM by Ge alloying
- (2015) Wouter Devulder et al. Journal of Materials Chemistry C
- High Aspect Ratio PS-b-PMMA Block Copolymer Masks for Lithographic Applications
- (2014) F. Ferrarese Lupi et al. ACS Applied Materials & Interfaces
- Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
- (2014) Byoung Kuk You et al. ACS Nano
- Three-Dimensional Nanofabrication by Block Copolymer Self-Assembly
- (2014) Caroline A. Ross et al. ADVANCED MATERIALS
- High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application
- (2014) Adrian Chasin et al. IEEE ELECTRON DEVICE LETTERS
- Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application
- (2014) Chun-Wei Huang et al. NANO LETTERS
- Formation and disruption of conductive filaments in a HfO2/TiN structure
- (2014) S Brivio et al. NANOTECHNOLOGY
- Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
- (2014) Chung-Wei Hsu et al. NANOTECHNOLOGY
- Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells
- (2013) Wouter Devulder et al. ACS Applied Materials & Interfaces
- Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
- (2013) S. Brivio et al. APPLIED PHYSICS LETTERS
- Latch-up based bidirectional npn selector for bipolar resistance-change memory
- (2013) Sungho Kim et al. APPLIED PHYSICS LETTERS
- Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory
- (2013) Liang Zhao et al. APPLIED PHYSICS LETTERS
- Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate
- (2013) Bhaswar Chakrabarti et al. IEEE ELECTRON DEVICE LETTERS
- A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell
- (2013) Attilio Belmonte et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
- (2013) Yang Yin Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
- (2013) An Chen IEEE TRANSACTIONS ON ELECTRON DEVICES
- Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
- (2013) Kuan-Liang Lin et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Block Copolymer Lithography
- (2013) Christopher M. Bates et al. MACROMOLECULES
- Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
- (2013) Li Ji et al. NANO LETTERS
- Engineered fabrication of ordered arrays of Au–NiO–Au nanowires
- (2013) Daniele Perego et al. NANOTECHNOLOGY
- Rapid fabrication of self-ordered porous alumina with 10-/sub-10-nm-scale nanostructures by selenic acid anodizing
- (2013) Osamu Nishinaga et al. Scientific Reports
- Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices
- (2012) Rui Yang et al. APPLIED PHYSICS LETTERS
- Low-power resistive switching in Au/NiO/Au nanowire arrays
- (2012) S. Brivio et al. APPLIED PHYSICS LETTERS
- Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits
- (2012) Wally Czubatyj et al. Electronic Materials Letters
- Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
- (2012) V. S. S. Srinivasan et al. IEEE ELECTRON DEVICE LETTERS
- Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array
- (2012) Chun-Li Lo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
- (2012) Woon Ik Park et al. NANO LETTERS
- Inorganic block copolymer lithography
- (2012) Adam Nunns et al. POLYMER
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
- (2011) L. Goux et al. APPLIED PHYSICS LETTERS
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications
- (2011) Jiun-Jia Huang et al. IEEE ELECTRON DEVICE LETTERS
- Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates
- (2011) Si-Hoon Lyu et al. JOURNAL OF MATERIALS CHEMISTRY
- Intrinsic Mechanisms of Memristive Switching
- (2011) Kazuki Nagashima et al. NANO LETTERS
- Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
- (2011) Li He et al. NANO LETTERS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
- (2011) Carlo Cagli et al. Small
- Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
- (2010) J. Joshua Yang et al. ADVANCED MATERIALS
- Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
- (2010) Jiun-Jia Huang et al. APPLIED PHYSICS LETTERS
- Forming and switching mechanisms of a cation-migration-based oxide resistive memory
- (2010) T Tsuruoka et al. NANOTECHNOLOGY
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Bipolar resistive switching in individual Au–NiO–Au segmented nanowires
- (2009) Edward D. Herderick et al. APPLIED PHYSICS LETTERS
- Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics
- (2009) Ho-Cheol Kim et al. CHEMICAL REVIEWS
- Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
- (2009) Keisuke Oka et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Reversible resistive switching behaviors in NiO nanowires
- (2008) Sung In Kim et al. APPLIED PHYSICS LETTERS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now