期刊
APPLIED PHYSICS LETTERS
卷 103, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4813832
关键词
-
资金
- Kookmin University in Korea
- National Research Foundation of Korea (NRF) [2011-0030228, 2012-0000147]
- Ministry of Education, Science and Technology [CISS-2012M3A6A6054187]
- Center for Integrated Smart Sensors
- Samsung Electronics Company, Ltd.
- SK Hynix Semiconductor Inc.
A vertically integrated latch-up based n-p-n bidirectional diode, which is analogous to an open-base bipolar junction transistor, is demonstrated for bipolar resistance-change memory selector application. A maximum current density of >50 MA/cm(2) and a selectivity of >10(4) are observed at a fast switching speed of within 10 ns. The high selectivity as a consequence of the sudden latch-up process is feasible owing to the positive-feedback process initiated by impact ionization. The optimization of the turn-on voltage is comprehensively investigated by numerical device simulation, which ensures the promising potential of the latch-up based selector device. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据