Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

标题
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 1, Pages 013504
出版商
AIP Publishing
发表日期
2015-07-07
DOI
10.1063/1.4926337

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