Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
出版年份 2016 全文链接
标题
Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-01-07
DOI
10.1038/srep18967
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Multi-level conduction in NiO resistive memory device prepared by solution route
- (2013) V Kannan et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanowire-based resistive switching memories: devices, operation and scaling
- (2013) D Ielmini et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Alumina Templates on Silicon Wafers with Hexagonally or Tetragonally Ordered Nanopore Arrays via Soft Lithography
- (2012) Man-Shik Park et al. BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Nanoparticle-Enabled Selective Electrodeposition
- (2011) Hsien-Ping Feng et al. ADVANCED MATERIALS
- Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film
- (2011) Sang Chul Oh et al. JOURNAL OF APPLIED PHYSICS
- Progress in non-volatile memory devices based on nanostructured materials and nanofabrication
- (2011) Jang-Sik Lee JOURNAL OF MATERIALS CHEMISTRY
- Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates
- (2011) Si-Hoon Lyu et al. JOURNAL OF MATERIALS CHEMISTRY
- rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers
- (2010) Megan L. Hoey et al. APPLIED PHYSICS LETTERS
- Electrodeposited Nickel Nanodots Array on the Silicon Wafer
- (2010) BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation
- (2010) M. Terai et al. IEEE ELECTRON DEVICE LETTERS
- Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
- (2010) L. Goux et al. JOURNAL OF APPLIED PHYSICS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3
- (2009) Dhanvir Singh Rana et al. ADVANCED MATERIALS
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of the top electrode material on the resistive switching of TiO2 thin film
- (2009) Wan-Gee Kim et al. MICROELECTRONIC ENGINEERING
- Highly Conducting Patterned Pd Nanowires by Direct-Write Electron Beam Lithography
- (2008) T. Bhuvana et al. ACS Nano
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch−2 density
- (2008) Woo Lee et al. Nature Nanotechnology
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search