Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
出版年份 2012 全文链接
标题
Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
作者
关键词
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出版物
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 34, Pages 17415
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-07-18
DOI
10.1039/c2jm33054g
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