Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

标题
Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 8, Issue 3, Pages 2061-2070
出版商
American Chemical Society (ACS)
发表日期
2015-12-25
DOI
10.1021/acsami.5b10520

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