Research on vertical GaN devices based on gradient Al components

880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

(2018) Dong Ji et al.   IEEE ELECTRON DEVICE LETTERS

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

(2017) Dong Ji et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications

(2015) Jiangfeng Du et al.   SUPERLATTICES AND MICROSTRUCTURES

Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications

(2015) Jiangfeng Du et al.   SUPERLATTICES AND MICROSTRUCTURES

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

(2013) Zhihua Dong et al.   ELECTRONICS LETTERS

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

(2013) Qimeng Jiang et al.   IEEE ELECTRON DEVICE LETTERS

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

(2013) Zhongda Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

(2012) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

(2010) Maojun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE