5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

标题
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
作者
关键词
-
出版物
ELECTRONICS LETTERS
Volume 49, Issue 3, Pages 221-222
出版商
Institution of Engineering and Technology (IET)
发表日期
2013-02-06
DOI
10.1049/el.2012.3153

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