Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Approaching the quantum limit in two-dimensional semiconductor contacts

(2023) Weisheng Li et al.   NATURE

Vertical MoS2 transistors with sub-1-nm gate lengths

(2022) Fan Wu et al.   NATURE

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

(2022) Lei Liu et al.   NATURE

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

(2021) Zhaowu Tang et al.   NANO LETTERS

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Sub-10 nm two-dimensional transistors: Theory and experiment

(2021) Ruge Quhe et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Insulators for 2D nanoelectronics: the gap to bridge

(2020) Yury Yu. Illarionov et al.   Nature Communications

Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

(2020) Qinqin Wang et al.   NANO LETTERS

Vertical Integration of 2D Building Blocks for All‐2D Electronics

(2020) Jian Tang et al.   Advanced Electronic Materials

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

(2020) Na Li et al.   Nature Electronics

Sub-10 nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes as an Evaporating Mask

(2019) Xiaoyang Xiao et al.   ACS Applied Materials & Interfaces

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

(2019) Jinbao Jiang et al.   Advanced Science

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

Mobility Deception in Nanoscale Transistors: An Untold Contact Story

(2018) Joseph R. Nasr et al.   ADVANCED MATERIALS

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations

(2017) Yijing Y. Stehle et al.   NANO LETTERS

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

(2017) Chuan Liu et al.   Physical Review Applied

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

(2016) Yuan Liu et al.   NANO LETTERS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

(2016) Quoc An Vu et al.   Nature Communications

The hot pick-up technique for batch assembly of van der Waals heterostructures

(2016) Filippo Pizzocchero et al.   Nature Communications

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Growth and Etching of Monolayer Hexagonal Boron Nitride

(2015) Lifeng Wang et al.   ADVANCED MATERIALS

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

(2015) Yuan Liu et al.   NANO LETTERS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

(2015) F. Bonaccorso et al.   SCIENCE

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

(2014) Lili Yu et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS