Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

(2017) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Carbon nanotube transistors scaled to a 40-nanometer footprint

(2017) Qing Cao et al.   SCIENCE

Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

(2017) Eunah Ko et al.   IEEE Journal of the Electron Devices Society

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

(2016) Asif Islam Khan et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

Tuning Chemical Potential Difference across Alternately Doped Graphene p–n Junctions for High-Efficiency Photodetection

(2016) Li Lin et al.   NANO LETTERS

The chips are down for Moore’s law

(2016) M. Mitchell Waldrop   NATURE

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

(2016) G. J. Brady et al.   Science Advances

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio

(2015) Chenguang Qiu et al.   ACS Nano

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements

(2015) C.-S. Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

(2015) Ashish V. Penumatcha et al.   Nature Communications

Toward High-Performance Digital Logic Technology with Carbon Nanotubes

(2014) George S. Tulevski et al.   ACS Nano

Ballistic Transport in Monolayer Black Phosphorus Transistors

(2014) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

III–V compound semiconductor transistors—from planar to nanowire structures

(2014) Heike Riel et al.   MRS BULLETIN

Charge distribution of metallic single walled carbon nanotube–graphene junctions

(2014) P T Robert et al.   NEW JOURNAL OF PHYSICS

Tunnel Field-Effect Transistors: State-of-the-Art

(2014) Hao Lu et al.   IEEE Journal of the Electron Devices Society

Figure of merit for and identification of sub-60 mV/decade devices

(2013) William G. Vandenberghe et al.   APPLIED PHYSICS LETTERS

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability

(2013) David Esseni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sub-10 nm Carbon Nanotube Transistor

(2012) Aaron D. Franklin et al.   NANO LETTERS

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor

(2011) Huilong Xu et al.   ACS Nano

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Van der Waals density functionals applied to solids

(2011) Jiří Klimeš et al.   PHYSICAL REVIEW B

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Steep-slope nanowire FET with a superlattice in the source extension

(2011) E. Gnani et al.   SOLID-STATE ELECTRONICS

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

(2010) Saurabh Mookerjea et al.   IEEE ELECTRON DEVICE LETTERS

Tunnel Field Effect Transistor With Raised Germanium Source

(2010) Sung Hwan Kim et al.   IEEE ELECTRON DEVICE LETTERS

Practical Strategies for Power-Efficient Computing Technologies

(2010) L. Chang et al.   PROCEEDINGS OF THE IEEE

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Chemical accuracy for the van der Waals density functional

(2009) Jiří Klimeš et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Evidence for Klein Tunneling in Graphenep−nJunctions

(2009) N. Stander et al.   PHYSICAL REVIEW LETTERS

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS