标题
The formation mechanism and stability of p-type N-doped Zn-rich ZnO films
作者
关键词
Acceptor Energy Level
出版物
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 5, Pages 5251-5258
出版商
Springer Nature
发表日期
2016-02-16
DOI
10.1007/s10854-016-4421-9
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The origin of the ∼274cm−1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films
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