期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 16, 期 9, 页码 4092-4097出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp53067a
关键词
-
资金
- National Natural Science Foundation of China [51102023]
- Special Fund for Basic Scientific Research of Central Colleges [CHD2011ZD012, CHD2012ZD003]
Ag-N dual-doped ZnO films have been fabricated by a chemical bath deposition method. The p-type conductivity of the dual-doped ZnO:(Ag, N) is stable over a long period of time, and the hole concentration in the ZnO:(Ag, N) is much higher than that in mono-doped ZnO: Ag or ZnO: N. We found that this is because Ag-Zn-N-O complex acceptors can be formed in ZnO:(Ag, N). First-principles calculations show that the complex acceptors generate a fully occupied band above the valance band maximum, so the acceptor levels become shallower and the hole concentration is increased. Furthermore, the binding energy of the Ag-N complex in ZnO is negative, so ZnO:(Ag, N) can be stable. These results indicate that the Ag-N dual-doping may be expected to be a potential route to achieving high-quality p-type ZnO for use in a variety of devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据