期刊
SOLID STATE COMMUNICATIONS
卷 152, 期 2, 页码 147-150出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.10.006
关键词
Ag-doped ZnO; Raman scattering spectrum; Local vibrational modes (LVMs); p-type
资金
- National Natural Science Foundation of China [11075314, 50942021]
- Natural Science Foundation of Chongqing City [CSTC, 2011BA4031]
Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm(-1) induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LVMZn-Ag) and Zn sites (LVMAg-O) in ZnO lattice. Moreover, we further studied the effect of donor Ag-O and acceptor Ag-Zn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of Ag-O defects and enhance Ag-Zn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition. Published by Elsevier Ltd
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据