Non-volatile memory characteristics of a Ti/HfO2/Pt synaptic device with a crossbar array structure
出版年份 2022 全文链接
标题
Non-volatile memory characteristics of a Ti/HfO2/Pt synaptic device with a crossbar array structure
作者
关键词
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出版物
CHAOS SOLITONS & FRACTALS
Volume 162, Issue -, Pages 112480
出版商
Elsevier BV
发表日期
2022-07-30
DOI
10.1016/j.chaos.2022.112480
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Versatile memristor for memory and neuromorphic computing
- (2022) Tao Guo et al. Nanoscale Horizons
- Memristive Artificial Synapses for Neuromorphic Computing
- (2021) Wen Huang et al. Nano-Micro Letters
- Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor
- (2021) Lei Wu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Stochastic model of memristor based on the length of conductive region
- (2021) N.V. Agudov et al. CHAOS SOLITONS & FRACTALS
- Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
- (2021) Muhammad Ismail et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
- (2021) Muhammad Ismail et al. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
- Memristor-based biomimetic compound eye for real-time collision detection
- (2021) Yan Wang et al. Nature Communications
- Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
- (2020) Chandreswar Mahata et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Nonstationary distributions and relaxation times in a stochastic model of memristor
- (2020) N V Agudov et al. JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT
- A Study of Conductance Update Method for Ni/SiNx/Si Analog Synaptic Device
- (2020) Boram Kim et al. SOLID-STATE ELECTRONICS
- A comprehensive review on emerging artificial neuromorphic devices
- (2020) Jiadi Zhu et al. Applied Physics Reviews
- Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems
- (2020) Ziyu Lv et al. CHEMICAL REVIEWS
- Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate
- (2020) Mehr Khalid Rahmani et al. Nanomaterials
- Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
- (2020) Jinju Lee et al. ACS Applied Materials & Interfaces
- Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
- (2020) Li Zhang et al. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
- Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN x ‐Based Memristor
- (2020) Junhyeok Choi et al. Physica Status Solidi-Rapid Research Letters
- Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
- (2019) Wei Wang et al. Nature Communications
- Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
- (2019) Arkady V. Yakimov et al. APPLIED PHYSICS LETTERS
- On quantumness in multi-parameter quantum estimation
- (2019) Angelo Carollo et al. JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT
- Geometry of quantum phase transitions
- (2019) Angelo Carollo et al. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
- Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
- (2019) D O Filatov et al. JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT
- From biomaterial-based data storage to bio-inspired artificial synapse
- (2018) Ziyu Lv et al. Materials Today
- Neuromorphic computing with multi-memristive synapses
- (2018) Irem Boybat et al. Nature Communications
- Review of memristor devices in neuromorphic computing: materials sciences and device challenges
- (2018) Yibo Li et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
- (2018) Shuang Pi et al. Nature Nanotechnology
- Anomalous transport effects on switching currents of graphene-based Josephson junctions
- (2017) Claudio Guarcello et al. NANOTECHNOLOGY
- Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices
- (2017) Sungjun Kim et al. RSC Advances
- Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2Bilayer RRAM Array for Neuromorphic Systems
- (2016) Jiyong Woo et al. IEEE ELECTRON DEVICE LETTERS
- Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
- (2016) Hao Jiang et al. Scientific Reports
- Stabilization Effects of Dichotomous Noise on the Lifetime of the Superconducting State in a Long Josephson Junction
- (2015) Claudio Guarcello et al. Entropy
- Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices
- (2015) Hee-Dong Kim et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Deep learning
- (2015) Yann LeCun et al. NATURE
- Phase dynamics in graphene-based Josephson junctions in the presence of thermal and correlated fluctuations
- (2015) Claudio Guarcello et al. PHYSICAL REVIEW B
- Stepping molecular motor amid Lévy white noise
- (2015) Bartosz Lisowski et al. PHYSICAL REVIEW E
- Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
- (2014) Stefano Ambrogio et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
- (2013) Shimeng Yu et al. ACS Nano
- A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode
- (2012) X. A. Tran et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
- (2011) Zhibo Yan et al. ADVANCED MATERIALS
- A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect
- (2011) Jung Won Seo et al. APPLIED PHYSICS LETTERS
- Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents
- (2011) C. H. Cheng et al. APPLIED PHYSICS LETTERS
- Electrode dependence of filament formation in HfO2 resistive-switching memory
- (2011) Kuan-Liang Lin et al. JOURNAL OF APPLIED PHYSICS
- Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment
- (2011) Po-Chun Yang et al. SOLID-STATE ELECTRONICS
- Spike train statistics for consonant and dissonant musical accords in a simple auditory sensory model
- (2010) Yuriy V. Ushakov et al. PHYSICAL REVIEW E
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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