标题
Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN
x
‐Based Memristor
作者
关键词
-
出版物
Physica Status Solidi-Rapid Research Letters
Volume -, Issue -, Pages 2000357
出版商
Wiley
发表日期
2020-08-21
DOI
10.1002/pssr.202000357
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
- (2020) Alexey Mikhaylov et al. Frontiers in Neuroscience
- Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
- (2020) Jinju Lee et al. ACS Applied Materials & Interfaces
- Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
- (2019) Tian-Yu Wang et al. Nanoscale Research Letters
- SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
- (2019) Chandreswar Mahata et al. APPLIED PHYSICS LETTERS
- Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
- (2019) Xiaobing Yan et al. Small
- A New Memristor with 2D Ti 3 C 2 T x MXene Flakes as an Artificial Bio‐Synapse
- (2019) Xiaobing Yan et al. Small
- Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors
- (2019) Chang Liu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
- (2018) Sungjun Kim et al. Small
- Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning
- (2018) Xiaobing Yan et al. ADVANCED FUNCTIONAL MATERIALS
- Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current
- (2018) Min-Hwi Kim et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Distributive Dynamic Spectrum Access through Deep Reinforcement Learning: A Reservoir Computing Based Approach
- (2018) Hao-Hsuan Chang et al. IEEE Internet of Things Journal
- Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition
- (2018) Hong-Ping Ma et al. Nanomaterials
- Nano-cone resistive memory for ultralow power operation
- (2017) Sungjun Kim et al. NANOTECHNOLOGY
- Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
- (2017) Sungjun Kim et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Reservoir computing using dynamic memristors for temporal information processing
- (2017) Chao Du et al. Nature Communications
- Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
- (2015) Sungjun Kim et al. APPLIED PHYSICS LETTERS
- Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
- (2015) Yu-Fen Wang et al. Scientific Reports
- a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
- (2015) Xiaofan Jiang et al. Scientific Reports
- A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
- (2013) Shimeng Yu et al. ADVANCED MATERIALS
- Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor
- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films
- (2013) Seok Man Hong et al. IEEE ELECTRON DEVICE LETTERS
- Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
- (2012) E. Miranda et al. APPLIED PHYSICS LETTERS
- Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
- (2012) Hee-Dong Kim et al. MICROELECTRONIC ENGINEERING
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation
- (2009) C. Sandhya et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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