标题
Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics
作者
关键词
-
出版物
ACS Nano
Volume 16, Issue 9, Pages 13595-13611
出版商
American Chemical Society (ACS)
发表日期
2022-09-14
DOI
10.1021/acsnano.2c07281
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe
- (2022) Zhao Guan et al. ACS Nano
- Multifunctional MoTe 2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping
- (2022) Jing Gao et al. ADVANCED FUNCTIONAL MATERIALS
- Reconfigurable two‐WSe 2 ‐transistor synaptic cell for reinforcement learning
- (2022) Yue Zhou et al. ADVANCED MATERIALS
- Two-dimensional reconfigurable electronics enabled by asymmetric floating gate
- (2022) Tengyu Jin et al. Nano Research
- Room-Temperature Ferroelectricity in 1T′ - ReS2 Multilayers
- (2022) Yi Wan et al. PHYSICAL REVIEW LETTERS
- Manipulation of current rectification in van der Waals ferroionic CuInP2S6
- (2022) Xingan Jiang et al. Nature Communications
- Brain-inspired computing needs a master plan
- (2022) A. Mehonic et al. NATURE
- Low-temperature processed beta-phase In2Se3 ferroelectric semiconductor thin film transistors
- (2022) Sora Lee et al. 2D Materials
- A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory
- (2022) Wenhui Tang et al. Small Methods
- High‐Performance Photoresponse in Ferroelectric d1T‐MoTe 2 ‐Based Vertical Photodetectors
- (2022) Jae Woo Park et al. Advanced Optical Materials
- HfO 2 ‐based Ferroelectrics Applications in Nanoelectronics
- (2021) Mircea Dragoman et al. Physica Status Solidi-Rapid Research Letters
- Review on Recent Developments in 2D Ferroelectrics: Theories and Applications
- (2021) Lu Qi et al. ADVANCED MATERIALS
- Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices
- (2021) Zheng‐Dong Luo et al. ADVANCED MATERIALS
- Promises and prospects of two-dimensional transistors
- (2021) Yuan Liu et al. NATURE
- Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes
- (2021) Dixiong Wang et al. Physica Status Solidi-Rapid Research Letters
- Van der Waals engineering of ferroelectric heterostructures for long-retention memory
- (2021) Xiaowei Wang et al. Nature Communications
- Progress and future prospects of negative capacitance electronics: A materials perspective
- (2021) Michael Hoffmann et al. APL Materials
- Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing
- (2021) Fei Xue et al. ADVANCED MATERIALS
- Stacking‐Engineered Heterostructures in Transition Metal Dichalcogenides
- (2021) Shixuan Wang et al. ADVANCED MATERIALS
- Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
- (2021) Xiwen Liu et al. APPLIED PHYSICS LETTERS
- Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory
- (2021) Xiwen Liu et al. NANO LETTERS
- Ferroelectric Synaptic Transistor Network for Associative Memory
- (2021) Mengge Yan et al. Advanced Electronic Materials
- Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection
- (2021) Yanxiao Sun et al. ACS Nano
- Emerging 2D Memory Devices for In‐Memory Computing
- (2021) Lei Yin et al. ADVANCED MATERIALS
- Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe
- (2021) Haowen Hu et al. NANOTECHNOLOGY
- 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware
- (2021) Lei Tong et al. SCIENCE
- Stacking-engineered ferroelectricity in bilayer boron nitride
- (2021) Kenji Yasuda et al. SCIENCE
- Direct measurement of ferroelectric polarization in a tunable semimetal
- (2021) Sergio C. de la Barrera et al. Nature Communications
- Memory applications from 2D materials
- (2021) Chin-Cheng Chiang et al. Applied Physics Reviews
- Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction
- (2021) Kun Yang et al. Nanomaterials
- Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures
- (2021) Shihong Xie et al. 2D Materials
- Analog and Digital Mode α‐In 2 Se 3 Memristive Devices for Neuromorphic and Memory Applications
- (2021) Yishu Zhang et al. Advanced Electronic Materials
- Perspectives of 2D Materials for Optoelectronic Integration
- (2021) Junru An et al. ADVANCED FUNCTIONAL MATERIALS
- The Road for 2D Semiconductors in the Silicon Age
- (2021) Shuiyuan Wang et al. ADVANCED MATERIALS
- Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP2S6 for Ferroelectric Tunnel Junction Device
- (2021) Eunyeong Yang et al. IEEE ELECTRON DEVICE LETTERS
- Nonvolatile Reconfigurable 2D Schottky Barrier Transistors
- (2021) Zijing Zhao et al. NANO LETTERS
- Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook
- (2021) Tom Vincent et al. Applied Physics Reviews
- Neuromorphic computing: Devices, hardware, and system application facilitated by two-dimensional materials
- (2021) Jihong Bian et al. Applied Physics Reviews
- Ferroelectric domain walls for nanotechnology
- (2021) Dennis Meier et al. Nature Reviews Materials
- Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions
- (2020) Wenhao Huang et al. ADVANCED MATERIALS
- Ultrasensitive negative capacitance phototransistors
- (2020) Luqi Tu et al. Nature Communications
- Memory devices and applications for in-memory computing
- (2020) Abu Sebastian et al. Nature Nanotechnology
- A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide
- (2020) Li Chen et al. Advanced Electronic Materials
- Ferromagnetic and ferroelectric two-dimensional materials for memory application
- (2020) Zhen Liu et al. Nano Research
- Electronics based on two-dimensional materials: Status and outlook
- (2020) Senfeng Zeng et al. Nano Research
- Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6
- (2020) Andrius Dziaugys et al. Nature Communications
- Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions
- (2020) Chen Pan et al. Nature Electronics
- Neuro-inspired computing chips
- (2020) Wenqiang Zhang et al. Nature Electronics
- High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
- (2020) Jiangbin Wu et al. Nature Electronics
- Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing
- (2020) Lin Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications
- (2020) Shuang Zhou et al. Frontiers of Physics
- Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide
- (2020) Sung-Joon Lee et al. Nature Electronics
- The future of ferroelectric field-effect transistor technology
- (2020) Asif Islam Khan et al. Nature Electronics
- Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor
- (2020) Matthew Gabel et al. ADVANCED FUNCTIONAL MATERIALS
- 2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures
- (2020) Junwei Chu et al. ADVANCED MATERIALS
- Two-dimensional transistors with reconfigurable polarities for secure circuits
- (2020) Peng Wu et al. Nature Electronics
- Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
- (2020) Seung-Young Seo et al. Nature Electronics
- In-Plane Ferroelectric Tunnel Junction
- (2019) Huitao Shen et al. Physical Review Applied
- AlScN: A III-V semiconductor based ferroelectric
- (2019) Simon Fichtner et al. JOURNAL OF APPLIED PHYSICS
- Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
- (2019) Shuoguo Yuan et al. Nature Communications
- Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric
- (2019) Fei Xue et al. ADVANCED MATERIALS
- Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS
- (2019) Yang Bao et al. NANO LETTERS
- Van der Waals negative capacitance transistors
- (2019) Xiaowei Wang et al. Nature Communications
- Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
- (2019) Liang Lv et al. Nature Communications
- Graphene and two-dimensional materials for silicon technology
- (2019) Deji Akinwande et al. NATURE
- Quest for p-Type Two-Dimensional Semiconductors
- (2019) Qiyuan He et al. ACS Nano
- Tunable quadruple-well ferroelectric van der Waals crystals
- (2019) John A. Brehm et al. NATURE MATERIALS
- Recent Progress in Two‐Dimensional Ferroelectric Materials
- (2019) Zhao Guan et al. Advanced Electronic Materials
- Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier
- (2019) Mingjin Dai et al. Advanced Electronic Materials
- Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba x Sr 1‐x TiO 3 and MoS 2 Channel
- (2019) Yeonsu Jeong et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure
- (2018) Mengwei Si et al. ACS Nano
- MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit
- (2018) Xingqiang Liu et al. ADVANCED MATERIALS
- Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices
- (2018) Yang Zhang et al. ADVANCED MATERIALS
- Contact engineering for 2D materials and devices
- (2018) Daniel S. Schulman et al. CHEMICAL SOCIETY REVIEWS
- Two-dimensional transition metal dichalcogenides: interface and defect engineering
- (2018) Zehua Hu et al. CHEMICAL SOCIETY REVIEWS
- Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
- (2018) Wei-Xiang You et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
- (2018) Mengwei Si et al. NANO LETTERS
- Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
- (2018) Chaojie Cui et al. NANO LETTERS
- Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking
- (2018) Jun Xiao et al. PHYSICAL REVIEW LETTERS
- Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures
- (2018) Qingsheng Zeng et al. Advanced Electronic Materials
- Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
- (2018) Sock Mui Poh et al. NANO LETTERS
- Ferroelectric switching of a two-dimensional metal
- (2018) Zaiyao Fei et al. NATURE
- Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
- (2018) H. Wang et al. Nature Communications
- Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In 2 Se 3 Nanoflakes down to the Monolayer Limit
- (2018) Fei Xue et al. ADVANCED FUNCTIONAL MATERIALS
- A Robust Artificial Synapse Based on Organic Ferroelectric Polymer
- (2018) Bobo Tian et al. Advanced Electronic Materials
- Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
- (2017) Felicia A. McGuire et al. NANO LETTERS
- Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes
- (2017) Yu Zhou et al. NANO LETTERS
- Steep-slope hysteresis-free negative capacitance MoS2 transistors
- (2017) Mengwei Si et al. Nature Nanotechnology
- The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems
- (2017) T Mikolajick et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
- (2017) Wenjun Ding et al. Nature Communications
- Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides
- (2017) Chuanhui Gong et al. Advanced Science
- A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device
- (2016) He Tian et al. ACS Nano
- Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
- (2016) Changhyun Ko et al. ADVANCED MATERIALS
- Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
- (2016) Felicia A. McGuire et al. APPLIED PHYSICS LETTERS
- Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
- (2016) Kai Chang et al. SCIENCE
- Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
- (2016) Fucai Liu et al. Nature Communications
- Van der Waals heterostructures and devices
- (2016) Yuan Liu et al. Nature Reviews Materials
- Thin-film ferroelectric materials and their applications
- (2016) Lane W. Martin et al. Nature Reviews Materials
- Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
- (2015) Young Tack Lee et al. ACS Nano
- Recent Advances in Two-Dimensional Materials beyond Graphene
- (2015) Ganesh R. Bhimanapati et al. ACS Nano
- Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics
- (2015) Xudong Wang et al. ADVANCED MATERIALS
- Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
- (2015) Hennrik Schmidt et al. CHEMICAL SOCIETY REVIEWS
- MoS2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating
- (2015) Xiao-Wen Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films
- (2014) Surajit Sutar et al. APPLIED PHYSICS LETTERS
- Negative capacitance in a ferroelectric capacitor
- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a1TMonolayer ofMoS2
- (2014) Sharmila N. Shirodkar et al. PHYSICAL REVIEW LETTERS
- Synaptic electronics: materials, devices and applications
- (2013) Duygu Kuzum et al. NANOTECHNOLOGY
- Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
- (2013) Inanc Meric et al. PROCEEDINGS OF THE IEEE
- MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
- (2012) Hee Sung Lee et al. Small
- Robust bi-stable memory operation in single-layer graphene ferroelectric memory
- (2011) Emil B. Song et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectric Field Effect Transistors for Memory Applications
- (2010) Jason Hoffman et al. ADVANCED MATERIALS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Graphene Field-Effect Transistors with Ferroelectric Gating
- (2010) Yi Zheng et al. PHYSICAL REVIEW LETTERS
- Metaplasticity: tuning synapses and networks for plasticity
- (2008) Wickliffe C. Abraham NATURE REVIEWS NEUROSCIENCE
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now