Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory
出版年份 2021 全文链接
标题
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory
作者
关键词
-
出版物
NANO LETTERS
Volume 21, Issue 9, Pages 3753-3761
出版商
American Chemical Society (ACS)
发表日期
2021-04-23
DOI
10.1021/acs.nanolett.0c05051
参考文献
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