Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

标题
Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
作者
关键词
-
出版物
NANO LETTERS
Volume -, Issue -, Pages -
出版商
American Chemical Society (ACS)
发表日期
2018-09-08
DOI
10.1021/acs.nanolett.8b02688

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