Multifunctional MoTe 2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

Controlling Native Oxidation of HfS2 for 2D Materials Based Flash Memory and Artificial Synapse

(2021) Tengyu Jin et al.   ACS Applied Materials & Interfaces

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

(2021) Arne Quellmalz et al.   Nature Communications

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

(2021) Xiaowei Wang et al.   Nature Communications

A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing

(2021) Jian Tang et al.   ADVANCED FUNCTIONAL MATERIALS

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

(2021) Lei Tong et al.   SCIENCE

A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

(2020) Li Chen et al.   Advanced Electronic Materials

Two-dimensional materials for next-generation computing technologies

(2020) Chunsen Liu et al.   Nature Nanotechnology

Stimuli‐Enabled Artificial Synapses for Neuromorphic Perception: Progress and Perspectives

(2020) Xuan Pan et al.   Small

Optically Controllable 2D Material/Complex Oxide Heterointerface

(2020) Tao Liu et al.   Advanced Science

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Laser-writable high-k dielectric for van der Waals nanoelectronics

(2019) N. Peimyoo et al.   Science Advances

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

(2019) Jianshi Tang et al.   ADVANCED MATERIALS

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Memristive Synapses and Neurons for Bioinspired Computing

(2019) Rui Yang et al.   Advanced Electronic Materials

Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

(2019) Jiankun Li et al.   ADVANCED MATERIALS

2D Layered Materials for Memristive and Neuromorphic Applications

(2019) Chen‐Yu Wang et al.   Advanced Electronic Materials

Two-dimensional transition metal dichalcogenides: interface and defect engineering

(2018) Zehua Hu et al.   CHEMICAL SOCIETY REVIEWS

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2

(2017) Chunsen Liu et al.   Small

A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device

(2016) He Tian et al.   ACS Nano

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

(2016) Youngseo Park et al.   APPLIED PHYSICS LETTERS

Trap-induced photoresponse of solution-synthesized MoS2

(2016) Youngbin Lee et al.   Nanoscale

The intrinsic origin of hysteresis in MoS2field effect transistors

(2016) Jiapei Shu et al.   Nanoscale

Electrostatically tunable lateral MoTe2p–n junction for use in high-performance optoelectronics

(2016) Zhenxing Wang et al.   Nanoscale

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Scaling behavior of hysteresis in multilayer MoS2 field effect transistors

(2014) Tao Li et al.   APPLIED PHYSICS LETTERS

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

(2014) Chun Zhao et al.   Materials

Paired-pulse facilitation at recurrent Purkinje neuron synapses is independent of calbindin and parvalbumin during high-frequency activation

(2013) Grit Bornschein et al.   JOURNAL OF PHYSIOLOGY-LONDON

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer

(2012) I. Jung et al.   CARBON

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Integrating functional oxides with graphene

(2012) X. Hong et al.   SOLID STATE COMMUNICATIONS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Nonvolatile memory devices based on few-layer graphene films

(2010) Yong-Joo Doh et al.   NANOTECHNOLOGY

Graphene Field-Effect Transistors with Ferroelectric Gating

(2010) Yi Zheng et al.   PHYSICAL REVIEW LETTERS