Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

Spin-dependent recombination in Czochralski silicon containing oxide precipitates

(2012) V. Lang et al.   JOURNAL OF APPLIED PHYSICS

Evaluation of possible mechanisms behind P gettering of iron

(2011) M. Syre et al.   JOURNAL OF APPLIED PHYSICS

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

(2011) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

(2011) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism

(2011) Zhidan Zeng et al.   JOURNAL OF CRYSTAL GROWTH

Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers

(2011) P. K. Kulshreshtha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging

(2011) Jonas Haunschild et al.   Physica Status Solidi-Rapid Research Letters

Contamination of silicon by iron at temperatures below 800 °C

(2011) J. D. Murphy et al.   Physica Status Solidi-Rapid Research Letters

Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

(2011) Lin Chen et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Temperature dependent carrier lifetime studies of Mo in crystalline silicon

(2010) Bijaya B. Paudyal et al.   JOURNAL OF APPLIED PHYSICS

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

(2009) K. Bothe et al.   JOURNAL OF APPLIED PHYSICS

Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon

(2009) B. B. Paudyal et al.   JOURNAL OF APPLIED PHYSICS

Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy

(2008) L. Dobaczewski et al.   APPLIED PHYSICS LETTERS