Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

(2010) T. Schutz-Kuchly et al.   APPLIED PHYSICS LETTERS

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS

Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

(2010) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

(2009) D. Macdonald et al.   JOURNAL OF APPLIED PHYSICS

Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon

(2009) Mukannan Arivanandhan et al.   JOURNAL OF APPLIED PHYSICS

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

(2009) J.-F. Lelièvre et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS