Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

(2011) L. I. Murin et al.   APPLIED PHYSICS LETTERS

Light-induced degradation in compensated p- and n-type Czochralski silicon wafers

(2011) Juliane Geilker et al.   JOURNAL OF APPLIED PHYSICS

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

(2010) T. Schutz-Kuchly et al.   APPLIED PHYSICS LETTERS

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS

Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

(2010) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Light-induced degradation in compensated n-type Czochralski silicon solar cells

(2010) Thomas Schutz-Kuchly et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

(2010) D. Macdonald et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

(2009) D. Macdonald et al.   JOURNAL OF APPLIED PHYSICS

The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C

(2008) B. B. Paudyal et al.   PROGRESS IN PHOTOVOLTAICS