Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices

Highly uniform resistive switching properties of NiFe2O4 films by embedding well-ordered pyramid-shaped Pt/Au nanostructures

(2021) Jiacheng Li et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

(2020) Emanuel Carlos et al.   ADVANCED MATERIALS

Advances in Resistive Switching based Memory Devices

(2019) Sandeep Munjal et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

(2019) Kuan-Ju Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

(2018) Vikas Kumar Sahu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Coexistence of unipolar and bipolar switching in nanocrystalline spinel ferrite ZnFe2O4 thin films synthesized by sol-gel method

(2018) Muhammad Ismail et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching with coexistence of mem-elements in the spray deposited CoFe2O4 thin film

(2017) T. D. Dongale et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film

(2017) Sandeep Munjal et al.   Scientific Reports

Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

(2016) Cong Ye et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices

(2016) P K Sarkar et al.   NANOTECHNOLOGY

Unipolar resistive switching effect and mechanism of solution-processed spinel Co3O4 thin films

(2016) Wei Hu et al.   MATERIALS & DESIGN

Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

(2015) D. Y. Guo et al.   APPLIED PHYSICS LETTERS

Temperature Impact on the Reset Operation in HfO2 RRAM

(2015) Francesco Maria Puglisi et al.   IEEE ELECTRON DEVICE LETTERS

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

(2015) Ee Lim et al.   Electronics

Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

(2014) Wei Hu et al.   ACS Applied Materials & Interfaces

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(2012) M. G. Cao et al.   APPLIED PHYSICS LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

(2012) Wei Hu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS