Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

标题
Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
作者
关键词
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出版物
ACS Applied Materials & Interfaces
Volume 6, Issue 7, Pages 5012-5017
出版商
American Chemical Society (ACS)
发表日期
2014-03-18
DOI
10.1021/am500048y

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