High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer

The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

(2021) Yongsun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐based MIM Structures: The Impact of Annealing Gas

(2021) Thomas Szyjka et al.   Physica Status Solidi-Rapid Research Letters

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

(2021) Terence Mittmann et al.   Physica Status Solidi-Rapid Research Letters

Special topic on ferroelectricity in hafnium oxide: Materials and devices

(2021) Thomas Mikolajick et al.   APPLIED PHYSICS LETTERS

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

(2021) Shelby S. Fields et al.   Advanced Materials Interfaces

Large Tunnel Electroresistance with Ultrathin Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Barriers

(2021) Bhagwati Prasad et al.   Advanced Electronic Materials

Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process

(2021) Venkateswarlu Gaddam et al.   IEEE ELECTRON DEVICE LETTERS

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

(2020) Vekateswarlu Gaddam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors

(2020) M. T. Do et al.   Scientific Reports

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

(2020) W. Hamouda et al.   APPLIED PHYSICS LETTERS

Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

(2020) Seungyeol Oh et al.   APPLIED PHYSICS LETTERS

Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices

(2020) Junghyeon Hwang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

(2019) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

(2019) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

(2019) Wenwu Xiao et al.   Nanoscale Research Letters

Depolarization of multidomain ferroelectric materials

(2019) Dong Zhao et al.   Nature Communications

Scaling down of cobalt quantum-dots by colloidal route for non-volatile memory device application

(2019) Manoj Yadav et al.   Micro & Nano Letters

Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate

(2019) Sang Jae Lee et al.   AIP Advances

Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

(2019) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

(2018) N. Gong et al.   APPLIED PHYSICS LETTERS

Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

(2018) Manoj Yadav et al.   JOURNAL OF ELECTRONIC MATERIALS

Dead layer effect and its elimination in ferroelectric thin film with oxide electrodes

(2016) Qiong Yang et al.   ACTA MATERIALIA

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

(2016) Jon F. Ihlefeld et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Growth and structure analysis of tungsten oxide nanorods using environmental TEM

(2012) Tomoharu Tokunaga et al.   Nanoscale Research Letters

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Solid-state memories based on ferroelectric tunnel junctions

(2011) André Chanthbouala et al.   Nature Nanotechnology