Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application

标题
Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application
作者
关键词
Hafnium oxide (HfO, x, ), Ferroelectric memory, Metal-ferroelectric-insulator-semiconductor, Ferroelectric tunnel junction
出版物
APPLIED SURFACE SCIENCE
Volume 573, Issue -, Pages 151566
出版商
Elsevier BV
发表日期
2021-10-12
DOI
10.1016/j.apsusc.2021.151566

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