Stabilization of the ferroelectric phase in Hf-based oxides by oxygen scavenging

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

(2021) Lutz Baumgarten et al.   APPLIED PHYSICS LETTERS

The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions

(2021) Xueqin Yang et al.   Applied Physics Express

Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory

(2021) Jun-Dao Luo et al.   IEEE ELECTRON DEVICE LETTERS

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

(2021) Siao-Cheng Yan et al.   IEEE ELECTRON DEVICE LETTERS

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

(2020) W. Hamouda et al.   APPLIED PHYSICS LETTERS

High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

(2020) Dipjyoti Das et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced soft magnetic properties in CoZrTa(B) thin film with improving amorphous structure via introducing B atoms

(2020) Xiulan Xu et al.   AIP Advances

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

(2019) Qing Luo et al.   IEEE ELECTRON DEVICE LETTERS

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

(2018) Shinji Migita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

(2017) E. O. Filatova et al.   Scientific Reports

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

(2016) Roy Winter et al.   ACS Applied Materials & Interfaces

Reversible oxygen scavenging at room temperature using electrochemically reduced titanium oxide nanotubes

(2015) Thomas Close et al.   Nature Nanotechnology

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

(2010) Takashi Ando et al.   APPLIED PHYSICS LETTERS