Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In‐Memory Computing

A Pure 2H‐MoS 2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator

(2020) Kaiyang Wang et al.   Advanced Electronic Materials

Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

(2020) Xiao-Di Huang et al.   IEEE ELECTRON DEVICE LETTERS

Ultrafast fiber laser based on HfSe2 saturable absorber

(2020) Xu Wu et al.   NANOTECHNOLOGY

Memory devices and applications for in-memory computing

(2020) Abu Sebastian et al.   Nature Nanotechnology

A native oxide high-κ gate dielectric for two-dimensional electronics

(2020) Tianran Li et al.   Nature Electronics

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

(2020) Shaochuan Chen et al.   Nature Electronics

Controlled surface oxidation of HfSe2 via oxygen-plasma treatment

(2019) Liyuan Zhao et al.   MATERIALS LETTERS

Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing

(2019) Xiaobing Yan et al.   Small

Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors

(2019) Zhaonan Li et al.   IEEE ELECTRON DEVICE LETTERS

Optoelectronic resistive random access memory for neuromorphic vision sensors

(2019) Feichi Zhou et al.   Nature Nanotechnology

Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse

(2018) Yi Sun et al.   IEEE ELECTRON DEVICE LETTERS

Zero-static power radio-frequency switches based on MoS2 atomristors

(2018) Myungsoo Kim et al.   Nature Communications

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Nanoscale Investigation of Defects and Oxidation of HfSe2

(2018) Qirong Yao et al.   Journal of Physical Chemistry C

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

(2018) Shuang Pi et al.   Nature Nanotechnology

A hardware Markov chain algorithm realized in a single device for machine learning

(2018) He Tian et al.   Nature Communications

Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation

(2018) Si-Yu Hu et al.   IEEE ELECTRON DEVICE LETTERS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Tunable electrical properties of multilayer HfSe2field effect transistors by oxygen plasma treatment

(2017) Moonshik Kang et al.   Nanoscale

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar

(2016) Yi Li et al.   ACS Applied Materials & Interfaces

Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

(2016) Jihang Lee et al.   ACS Nano

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits

(2016) Peng Huang et al.   ADVANCED MATERIALS

Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2

(2016) Lei Yin et al.   APPLIED PHYSICS LETTERS

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

(2016) Gioele Mirabelli et al.   JOURNAL OF APPLIED PHYSICS

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

(2016) Kyung Min Kim et al.   NANO LETTERS

Ultra-Low Power Ni/HfO2/TiOx/TiN Resistive Random Access Memory With Sub-30-nA Reset Current

(2015) Kailiang Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

(2015) Shuang Gao et al.   Nanoscale

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Metal oxide-resistive memory using graphene-edge electrodes

(2015) Seunghyun Lee et al.   Nature Communications

A HfO2-Based Complementary Switching Crossbar Adder

(2015) Thomas Breuer et al.   Advanced Electronic Materials

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

(2014) Ruoyu Yue et al.   ACS Nano

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

(2014) Min Qian et al.   ADVANCED MATERIALS

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE