Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 41, Issue 4, Pages 549-552

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-03-03

DOI

10.1109/led.2020.2977397

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