标题
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
作者
关键词
-
出版物
Materials
Volume 14, Issue 18, Pages 5348
出版商
MDPI AG
发表日期
2021-09-18
DOI
10.3390/ma14185348
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars
- (2021) M. Agati et al. MATERIALS & DESIGN
- Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
- (2021) Massimo Zimbone et al. ACTA MATERIALIA
- Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
- (2021) Michael Schöler et al. CRYSTAL GROWTH & DESIGN
- Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)
- (2020) Yuchen Shi et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
- (2020) Filippo Giannazzo et al. Advanced Electronic Materials
- Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
- (2020) Massimo Zimbone et al. CRYSTAL GROWTH & DESIGN
- Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis
- (2020) Viviana Scuderi et al. Materials
- Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
- (2020) Giuseppe Fisicaro et al. Applied Physics Reviews
- A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
- (2019) Yuchen Shi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
- (2019) Schuh et al. Materials
- Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
- (2019) Philipp Schuh et al. Materials
- 3C-SiC grown on Si by using a Si1-xGex buffer layer
- (2019) M. Zimbone et al. JOURNAL OF CRYSTAL GROWTH
- Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC : Reconciling Theory and Experiments
- (2019) Emilio Scalise et al. Physical Review Applied
- Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
- (2019) Michael Schöler et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach
- (2019) Marco Masullo et al. Materials
- 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
- (2019) Massimo Zimbone et al. Materials
- Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
- (2019) Anzalone et al. Materials
- Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
- (2018) Marco Albani et al. JOURNAL OF APPLIED PHYSICS
- Protrusions reduction in 3C-SiC thin film on Si
- (2018) Massimo Zimbone et al. JOURNAL OF CRYSTAL GROWTH
- From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
- (2018) F. La Via et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)
- (2018) Yuchen Shi et al. CARBON
- Review of SiC crystal growth technology
- (2018) Peter J Wellmann SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Simulation of the Growth Kinetics in Group IV Compound Semiconductors
- (2018) Antonino La Magna et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
- (2017) P. Schuh et al. JOURNAL OF CRYSTAL GROWTH
- Carbonization and transition layer effects on 3C-SiC film residual stress
- (2017) R. Anzalone et al. JOURNAL OF CRYSTAL GROWTH
- Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
- (2017) Anna Marzegalli et al. MATERIALS & DESIGN
- Investigation on the laser ablation of SiC ceramics using micro‐Raman mapping technique
- (2016) Chaoli Fu et al. Journal of Advanced Ceramics
- Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
- (2015) Valdas Jokubavicius et al. CRYSTAL GROWTH & DESIGN
- 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail
- (2014) Gabriel Ferro CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
- Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
- (2014) Valdas Jokubavicius et al. CRYSTAL GROWTH & DESIGN
- Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
- (2014) Peter Wellmann et al. CRYSTAL RESEARCH AND TECHNOLOGY
- Mechanisms of growth and defect properties of epitaxial SiC
- (2014) F. La Via et al. Applied Physics Reviews
- Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
- (2013) Francesca Iacopi et al. APPLIED PHYSICS LETTERS
- Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
- (2012) M. Zielinski et al. JOURNAL OF APPLIED PHYSICS
- Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
- (2012) Francesco La Via et al. JOURNAL OF MATERIALS RESEARCH
- Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy
- (2012) J Yamasaki et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals
- (2012) C. V. Falub et al. SCIENCE
- Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application
- (2011) R. Anzalone et al. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
- Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C
- (2011) Li Wang et al. THIN SOLID FILMS
- Microtwin reduction in 3C–SiC heteroepitaxy
- (2010) A. Severino et al. APPLIED PHYSICS LETTERS
- Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates
- (2009) R. Anzalone et al. JOURNAL OF APPLIED PHYSICS
- Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects
- (2008) Hiroyuki Nagasawa et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Prospects for 3C-SiC bulk crystal growth
- (2007) D. Chaussende et al. JOURNAL OF CRYSTAL GROWTH
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