Article
Chemistry, Multidisciplinary
Maddalena Pedio, Elena Magnano, Paolo Moras, Francesco Borgatti, Roberto Felici, Barbara Troian, Stefano Prato, Cristian Soncini, Cinzia Cepek
Summary: This article reports a systematic investigation of the spectroscopic and structural properties of 3C-silicon carbide films and emphasizes the importance of growing them on flat and good quality Si substrates to obtain high-quality 3C-SiC/Si interfaces with minimal defects.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Tuan-Hung Nguyen, Abu Riduan Md Foisal, Tuan Anh Pham, Trung-Hieu Vu, Hong-Quan Nguyen, Erik W. Streed, Jarred Fastier-Wooller, Pablo Guzman Duran, Philip Tanner, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Summary: In recent years, the lateral photovoltaic effect (LPE) has been explored as an indispensable method for position detection applications due to its unique working mechanism. The 3C-SiC/Si heterojunction has been identified as a promising platform for developing self-powered position-sensitive detectors (PSDs) because of its large built-in voltage and capabilities to work in harsh environments. This study further demonstrated the superior performance of the 3C-SiC/Si heterojunction for position sensing by optimizing the diffusion layer thickness.
IEEE SENSORS JOURNAL
(2023)
Article
Materials Science, Ceramics
Shiming Hao, Pengru Liu, Haozhan Wu, Huifang Wang, Jingpei Xie
Summary: SiC nanopowders were synthesized using silicon powders and expanded graphite as initial materials, and ferric nitrate as catalyst precursor. The effects of heat treatment temperature and the C/Si molar ratio on SiC products were investigated. The microstructure, phase composition, chemical state, and photoluminescence properties of the products were analyzed. The results showed that the 3C-SiC product had a higher content when heat-treated at 1400 degrees C for 3 hours with a C/Si molar ratio of 1:1. The formation process of 3C-SiC could be explained by a two-step method, and it exhibited potential applications in ultraviolet detectors, optoelectronic devices, and light emitters.
CERAMICS INTERNATIONAL
(2023)
Article
Engineering, Multidisciplinary
Anastasios Arvanitopoulos, Marina Antoniou, Fan Li, Mike R. Jennings, Samuel Perkins, Konstantinos Gyftakis, Neophytos Lophitis
Summary: This article presents a novel process flow for a vertical 3C-SiC-on-Si mosfet, aiming to overcome the difficulties in obtaining a p-body region through implantation. The proposed design has been accurately simulated and the reliability of material models and channel mobility physics model has been validated. The output characteristics of the proposed device demonstrate promising performance, potentially serving as a solution for realizing 3C-SiC-on-Si mosfets with commercially graded characteristics.
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Lei Zhou, Jiaping Zhang, Dou Hu, Qiangang Fu, Jian Zhu, Jingyuan Song, Wuqing Ding, Jiaqi Hou, Mingde Tong
Summary: The study investigated the oxidation and ablation behaviors of HfB2-SiC-Si/SiC-Si coatings under high temperatures, showing that the coatings exhibited good anti-ablation properties at 1800 degrees Celsius. Despite the severe corrosion at the nose tip, the protective layer composed of HfO2 and Hf-Si-O glass in the coating could withstand the scouring of the oxyacetylene torch.
Article
Materials Science, Multidisciplinary
Braiden Tong, Tuan-Hung Nguyen, Hong-Quan Nguyen, Tuan-Khoa Nguyen, Thanh Nguyen, Toan Dinh, Ngo Vo Ke Thanh, Truong Huu Ly, Nguyen Chi Cuong, Hoang Ba Cuong, Trinh Xuan Thang, Van Thanh Dau, Dzung Viet Dao
Summary: SiC-based pressure sensors with excellent properties in mechanical, electrical, thermal, and chemical aspects show great potential for harsh environment applications. This study presents the design, fabrication, and characterization of a highly sensitive and robust 3C-SiC/Si pressure sensor, which utilizes a stress amplification structure and a chemical protective thin film to enhance the sensor's performance.
MATERIALS & DESIGN
(2022)
Article
Materials Science, Multidisciplinary
M. Agati, S. Boninelli, C. Calabretta, F. Mancarella, M. Mauceri, D. Crippa, M. Albani, R. Bergamaschini, L. Miglio, F. La Via
Summary: This paper investigates the morphology and microstructural properties of thick [1 1 1]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. The study examines crystallographic defects in the film and analyzes the impact of crystal quality on potential applications in high-performance microelectronic devices.
MATERIALS & DESIGN
(2021)
Article
Chemistry, Physical
Huafeng Quan, Shanying Sui, Lianyi Wang, Ruiying Luo, Xiaohui Dong
Summary: The study proposed a strategy for preparing multilayer SiC/ZrB2-CrSi2-Si/SiC coatings at low temperatures, which can enhance the oxidation resistance of C/C composites, and emphasized the importance of organosilicon in the processes of self-healing and oxidation resistance.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Thanh Nguyen, Toan Dinh, John Bell, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Summary: This paper proposes a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy and simultaneously sense the surrounding temperature. The technology converts photon energy into electrical energy and utilizes the lateral photovoltage variation to monitor the temperature. Experimental results demonstrate the high sensitivity and temperature measurement capability of the technology in self-power mode.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Tuan-Hung Nguyen, Trung-Hieu Vu, Tuan Anh Pham, Dinh Gia Ninh, Cong Thanh Nguyen, Hong-Quan Nguyen, Braiden Tong, Dang D. H. Tran, Erik W. Streed, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Summary: In this work, an enhanced lateral photovoltaic effect (LPE) in 3C-SiC/Si heterojunction under an external electric field is reported, and its application in an ultrasensitive position-sensitive detector (PSD) is demonstrated. The generation and transport of the photo-induced charge carriers are investigated by examining the band diagram of the 3C-SiC/Si heterojunction, providing a detailed explanation of the phenomenon. The findings in this study demonstrate the potential of 3C-SiC/Si heterojunction to develop high-performance noncontact optical sensors for harsh environment applications.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Materials Science, Multidisciplinary
Lei Zhou, Qiangang Fu, Dou Hu, Jiaping Zhang, Yalong Wei, Jian Zhu, Jingyuan Song, Mingde Tong
Summary: The dense double layer ZrB2-SiC-Si/SiC-Si coating effectively protects the C/C substrate from oxidation, attributed to the high content of ZrB2 and the mechanism of inhibiting the evaporation of silicate glass.
Article
Chemistry, Physical
F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco, F. Giannazzo, F. La Via, M. Zielinski, H. Mank, V. Jokubavicius, R. Yakimova
Summary: In this paper, the feasibility of fabricating vertical Schottky diodes on 3C-SiC material was demonstrated. The good quality of the epilayers grown with this method was verified by morphological and structural analyses. The experimental results showed stable performance of the fabricated vertical Schottky diodes, indicating the suitability of the material for medium-voltage power devices.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Kangsik Kim, Seungwoo Son, Seonwoo Lee, Jong-Hyun Ahn, Zonghoon Lee
Summary: This research investigates the heteroepitaxial growth of 3C-SiC on Si nanomembrane using in situ heating transmission electron microscopy. The study demonstrates the growth of 3C-SiC at the preferential direction without defects, attributing it to the bowing effect at the nanoscale compensating for lattice misfit.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Nanoscience & Nanotechnology
Tuan-Hung Nguyen, Thanh Nguyen, Abu Riduan Md Foisal, Toan Dinh, Hong-Quan Nguyen, Erik W. Streed, Trung-Hieu Vu, Philip Tanner, Van Thanh Dau, Nam-Trung Nguyen, Dzung Viet Dao
Summary: This study successfully generated a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration, resulting in a high lateral photovoltage. The potential of lateral photovoltaic and self-powered devices was demonstrated. Additionally, by explaining the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory, the working mechanism and behavior of the lateral photovoltaic effect were further explored.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Multidisciplinary
Ilayda M. Tamay, Kasif Teker
Summary: This study reports a self-powered 3C-SiC/Si heterostructure photodetector capable of operating under UV-vis light, offering multiband photodetection sensitivity and fast response speed.
Review
Physics, Nuclear
Francesco Cappuzzello, Clementina Agodi, Luciano Calabretta, Daniela Calvo, Diana Carbone, Manuela Cavallaro, Maria Colonna, Paolo Finocchiaro, Felice Iazzi, Roberto Linares, Jose R. B. Oliveira, Luciano Pandola, Elena Santopinto, Domenico Torresi, Salvatore Tudisco, Luis Acosta, Carmen Altana, Paulina Amador-Valenzuela, Luis Humberto Avanzi, Jessica Bellone, Danilo Bonanno, Ismail Boztosun, Sandro Brasolin, Giuseppe A. Brischetto, Oscar Brunasso, Salvatore Calabrese, Luigi Campajola, Vittoria Capirossi, Efrain R. Chavez Lomeli, Irene Ciraldo, Vitor Angelo Paulino de Aguiar, Franck Delaunay, Carlo Ferraresi, Maria Fisichella, Elisa Gandolfo, Marcilei Aparecida Guazzelli, Francesco La Via, Daniel J. Marin Lambarri, Horst Lenske, Jesus Lubian, Nilberto H. Medina, Paolo Mereu, Mauricio Moralles, Annamaria Muoio, Horia Petrascu, Federico Pinna, Diego Sartirana, Onoufrios Sgouros, Selcuk O. Solakci, Vasilis Soukeras, Alessandro Spatafora, Antonio D. Russo, Aydin Yildirim
Summary: The NUMEN project proposes an innovative technique to access nuclear matrix elements through heavy-ion induced Double Charge Exchange reactions, aiming to study the lifetime of double beta decay. Despite being triggered by different types of interactions, similarities in many-body wave functions and transition operators exist between neutrinoless double beta decay and DCE reactions. The upgrade of INFN-LNS facilities, connected to the POTLNSa project, is essential for enabling measurements of DCE cross-section under extremely high beam intensities as required by the NUMEN project.
INTERNATIONAL JOURNAL OF MODERN PHYSICS A
(2021)
Article
Energy & Fuels
Salvatore Valastro, Giovanni Mannino, Emanuele Smecca, Corrado Bongiorno, Salvatore Sanzaro, Ioannis Deretzis, Antonino La Magna, Ajay Kumar Jena, Tsutomu Miyasaka, Alessandra Alberti
Summary: The black gamma-phase of CsPbI3 can be transformed into the yellow delta-phase by thermal heating. Researchers used spectroscopic ellipsometry and critical points analysis to monitor the transformation process and modeled the consumption and growth of the phases. They found that europium can extend the durability of the black gamma-phase.
Article
Chemistry, Analytical
Alessandro Meli, Annamaria Muoio, Riccardo Reitano, Enrico Sangregorio, Lucia Calcagno, Antonio Trotta, Miriam Parisi, Laura Meda, Francesco La Via
Summary: The aim of this study was to characterize a thick 4H SiC epitaxial layer and compare the results before and after a thermal oxidation process. The oxidation process was found to improve the carrier lifetime and diffusion length of the epitaxial layer.
Article
Physics, Applied
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte
Summary: This work investigates the threshold voltage instability of normally off p-GaN high electron mobility transistors by monitoring the gate current density during device on-state. It is found that the gate current variations are caused by charge trapping at different interfaces in the metal/p-GaN/AlGaN/GaN system. Depending on the stress bias level, trapped electrons or holes lead to positive or negative threshold voltage shift, respectively.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski, F. La Via, F. Giannazzo, F. Roccaforte
Summary: The interfacial electrical properties and oxide field strength of deposited oxide SiO2 on 3C-SiC can be improved by post-oxide deposition annealing. The density of electrically active stacking faults in 3C-SiC is reduced after appropriate annealing. These results pave the way for an ideal SiO2/3C-SiC system for power device applications.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Crystallography
Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro, Manuel Kollmuss, Francesco La Via, Salvatore F. Lombardo, Michael Schoeler, Peter J. Wellmann, Antonino La Magna
Summary: Multiscale approaches play an important role in materials processing simulation, offering cost reduction and performance enhancement. By integrating physical-chemical simulations and trained black-box techniques through digital twin modules, the real processes in development and production can be effectively complemented. This paper proposes a general paradigm for industrially driven computational modeling of materials using a multiscale methodology, which is demonstrated through two processing examples.
Article
Crystallography
Manuel Kollmuss, Francesco La Via, Peter J. Wellmann
Summary: A systematic study was conducted to determine the important growth parameters and their effects on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C-SiC). Close space physical vapor transport (CS-PVT) growth was performed on 3C-SiC and 4 degrees off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers. Different growth parameters, such as temperature, pressure, and N-2 flux, were varied while keeping the other parameters constant. The sample characterization was done using Raman spectroscopy, potassium hydroxide (KOH) etching, optical microscopy, and atomic force microscopy (AFM). The results showed that step-flow-controlled growth was observed on all samples with reduced stacking fault density compared to the seeding layers. Increased temperature and pressure led to roughening of the growth surface due to step bunching, while the effect on stacking fault density was minimal. Increased nitrogen doping decreased the stacking fault density but increased the length of remaining stacking faults. Nitrogen had a macroscopic effect on the surface morphology rather than on a microscopic scale.
CRYSTAL RESEARCH AND TECHNOLOGY
(2023)
Article
Biochemistry & Molecular Biology
Federica De Gaetano, Angela Scala, Consuelo Celesti, Kim Lambertsen Larsen, Fabio Genovese, Corrado Bongiorno, Loredana Leggio, Nunzio Iraci, Nunzio Iraci, Antonino Mazzaglia, Cinzia Anna Ventura
Summary: In this study, nanoparticles based on ACyD8 were developed for potential intranasal delivery of IDE to treat neurological disorders. The nanoparticles effectively loaded IDE and showed sustained release. In vitro studies demonstrated the lack of toxicity and antioxidant effect of the IDE/ACyD8-NPs on neuronal cells.
Article
Chemistry, Physical
Viviana Scuderi, Marcin Zielinski, Francesco La Via
Summary: In this study, micro-Raman spectroscopy was used to investigate the effect of different doping on the stress distribution in silicon substrates and 3C-SiC films. The results showed that the stress in silicon is always compressive, while in 3C-SiC it is always tensile. The type of stress in the remaining 6 mu m of the film varies with doping.
Review
Chemistry, Analytical
Francesco La Via, Daniel Alquier, Filippo Giannazzo, Tsunenobu Kimoto, Philip Neudeck, Haiyan Ou, Alberto Roncaglia, Stephen E. E. Saddow, Salvatore Tudisco
Summary: In recent years, SiC has seen new applications proposed in various fields. This review discusses the development status, main challenges, and future prospects of several emerging SiC applications. The paper extensively reviews the use of SiC in high temperature space applications, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, devices with integrated 2D materials, and biosensors. The development of these applications, particularly in the 4H-SiC ones, has been facilitated by advancements in SiC technology and improvements in material quality and price. However, further development in these fields requires the development of new processes and improvement in material properties. In the case of 3C-SiC applications, despite the performance of the devices and their potential market, the lack of material and specific processes development, as well as the limited availability of SiC foundries, hamper further progress.
Article
Green & Sustainable Science & Technology
Salvatore Valastro, Emanuele Smecca, Giovanni Mannino, Corrado Bongiorno, Giuseppe Fisicaro, Stefan Goedecker, Valentina Arena, Carlo Spampinato, Ioannis Deretzis, Sandro Dattilo, Andrea Scamporrino, Sabrina Carroccio, Enza Fazio, Fortunato Neri, Francesco Bisconti, Aurora Rizzo, Corrado Spinella, Antonino La Magna, Alessandra Alberti
Summary: With the projected rapid growth of the market uptake of perovskite solar cells (PSCs), the use of this clean energy technology will play a crucial role in reducing the global carbon footprint. However, the presence of toxic lead (Pb) poses a major barrier to its full commercialization. Researchers have demonstrated that the application of a transparent titanium dioxide (TiO2) sponge can effectively prevent Pb leakage, leading to a more sustainable solution and accelerated practical applications.
NATURE SUSTAINABILITY
(2023)
Article
Physics, Applied
M. Vivona, P. Fiorenza, V. Scuderi, F. La Via, F. Giannazzo, F. Roccaforte
Summary: The impact of stacking faults (SFs) on the characteristics of 4H-SiC Schottky diodes was investigated under both forward and reverse bias. Under forward bias, SFs had no significant effect on the ideality factor and barrier height, but under reverse bias, an anomalous increase in leakage current was observed. The leakage current behavior can be explained by a space-charge limited current model, indicating the presence of trapping states in 4H-SiC. The results provide insights into unexpected failures in 4H-SiC Schottky diodes.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Analytical
Carmen Altana, Lucia Calcagno, Caterina Ciampi, Francesco La Via, Gaetano Lanzalone, Annamaria Muoio, Gabriele Pasquali, Domenico Pellegrino, Sebastiana Puglia, Giuseppe Rapisarda, Salvatore Tudisco
Summary: The radiation damage studies of a new large area p-n junction silicon carbide device developed by the SiCILIA collaboration are discussed in this work. The results show that the new devices exhibit excellent performance in terms of stability, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc., and have a radiation resistance more than two orders of magnitude higher than silicon devices. The application of the new construction technology to silicon carbide material has enabled the creation of robust devices with excellent performance.
Article
Chemistry, Physical
Emanuela Schiliro, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte
Summary: Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator were fabricated on cubic silicon carbide (3C-SiC) using both thermal and plasma-enhanced Atomic Layer Deposition (ALD). The deposited Al2O3/SiO2 stacks showed lower negative shifts of the flat band voltage VFB compared with the conventional single SiO2 layer. The plasma-enhanced ALD approach produced Al2O3 layers with better insulating behavior in terms of leakage current breakdown distribution.
Article
Chemistry, Physical
G. M. Vanacore, D. Chrastina, E. Scalise, L. Barbisan, A. Ballabio, M. Mauceri, F. La Via, G. Capitani, D. Crippa, A. Marzegalli, R. Bergamaschini, L. Miglio
Summary: This paper addresses the unique nature of fully textured, high surface-to-volume 3C-SiC films, produced by intrinsic growth anisotropy. The structural interpretation of scanning electron microscopy and transmission electron microscopy data is carried out for samples grown under suitable deposition conditions. Twinning along (111) planes is also found to be frequent in such materials.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)