Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy

标题
Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 49, Pages 494002
出版商
IOP Publishing
发表日期
2012-11-16
DOI
10.1088/0022-3727/45/49/494002

向作者/读者发起求助以获取更多资源

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started