Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Protrusions reduction in 3C-SiC thin film on Si

(2018) Massimo Zimbone et al.   JOURNAL OF CRYSTAL GROWTH

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

(2018) F. La Via et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

(2017) P. Schuh et al.   JOURNAL OF CRYSTAL GROWTH

Carbonization and transition layer effects on 3C-SiC film residual stress

(2017) R. Anzalone et al.   JOURNAL OF CRYSTAL GROWTH

Mechanisms of growth and defect properties of epitaxial SiC

(2014) F. La Via et al.   Applied Physics Reviews

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

(2012) Francesco La Via et al.   JOURNAL OF MATERIALS RESEARCH

Electron backscattering from stacking faults in SiC by means ofab initioquantum transport calculations

(2012) I. Deretzis et al.   PHYSICAL REVIEW B

Stacking faults evolution during epitaxial growths: Role of surface the kinetics

(2010) Massimo Camarda et al.   SURFACE SCIENCE