3C-SiC grown on Si by using a Si1-xGex buffer layer

标题

作者

关键词

A1. Characterization, A1. Crystal structure, A2. Single crystal growth, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds

出版物

Volume 519, Issue -, Pages 1-6

出版商

Elsevier BV

发表日期

2019-04-01

DOI

10.1016/j.jcrysgro.2019.03.029

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