A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe

(2019) Tao Shen et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-VTe2 Grown by Molecular Beam Epitaxy

(2019) Xingyuan Ma et al.   ACS Applied Materials & Interfaces

Chemically Exfoliated VSe 2 Monolayers with Room‐Temperature Ferromagnetism

(2019) Wei Yu et al.   ADVANCED MATERIALS

Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit

(2018) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

(2018) Manuel Bonilla et al.   Nature Nanotechnology

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

(2018) Feng Zhang et al.   NATURE MATERIALS

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

(2017) Akinola D. Oyedele et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

(2017) Ji Ho Sung et al.   Nature Nanotechnology

Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

(2017) Xinming Li et al.   Applied Physics Reviews

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

(2016) A. Politano et al.   Nanoscale

The role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen

(2016) Damien Voiry et al.   NATURE MATERIALS

Mixed-dimensional van der Waals heterostructures

(2016) Deep Jariwala et al.   NATURE MATERIALS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

New Products

(2016)   SCIENCE

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

A Review of Sharp-Switching Devices for Ultra-Low Power Applications

(2016) Sorin Cristoloveanu et al.   IEEE Journal of the Electron Devices Society

Van der Waals heterostructures and devices

(2016) Yuan Liu et al.   Nature Reviews Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

Two-dimensional materials and their prospects in transistor electronics

(2015) F. Schwierz et al.   Nanoscale

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Tunnel Field-Effect Transistors: State-of-the-Art

(2014) Hao Lu et al.   IEEE Journal of the Electron Devices Society

25th Anniversary Article: MXenes: A New Family of Two-Dimensional Materials

(2013) Michael Naguib et al.   ADVANCED MATERIALS

Ultrathin Nanosheets of Vanadium Diselenide: A Metallic Two-Dimensional Material with Ferromagnetic Charge-Density-Wave Behavior

(2013) Kun Xu et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

(2013) F. Jazaeri et al.   SOLID-STATE ELECTRONICS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS