期刊
ADVANCED MATERIALS
卷 31, 期 42, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201903613
关键词
chemical doping; chemical vapor deposition; complementary inverter; p-n junction; tungsten diselenide
类别
资金
- JSPS KAKENHI [JP17K19036, JP18H01832, JP18H03864]
- JST CREST [JPMJCR18I1, JPMJCR16F3]
Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm(2) V(-1)s(-1) for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (approximate to 0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.
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