Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

标题
Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 8, Pages 1157-1160
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-06-10
DOI
10.1109/led.2017.2714178

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