Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

标题
Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 12, Pages 4838-4843
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-11-01
DOI
10.1109/ted.2017.2762926

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