标题
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
作者
关键词
-
出版物
Materials
Volume 13, Issue 1, Pages 213
出版商
MDPI AG
发表日期
2020-01-06
DOI
10.3390/ma13010213
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain
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