A conductivity-based selective etching for next generation GaN devices

标题
A conductivity-based selective etching for next generation GaN devices
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 247, Issue 7, Pages 1713-1716
出版商
Wiley
发表日期
2010-06-01
DOI
10.1002/pssb.200983650

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