Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si

(2013) Praveen Kumar et al.   Applied Physics Express

Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

(2013) Toshiya Ohata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

(2013) J. Pal et al.   JOURNAL OF APPLIED PHYSICS

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

(2013) Jing Zhang et al.   IEEE Photonics Journal

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

(2012) Ingrid L. Koslow et al.   APPLIED PHYSICS LETTERS

Bifacial Growth InGaP/GaAs/InGaAs Concentrator Solar Cells

(2012) Steven Wojtczuk et al.   IEEE Journal of Photovoltaics

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

On ternary nitride substrates for visible semiconductor light-emitters

(2010) T. K. Sharma et al.   APPLIED PHYSICS LETTERS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Current topics of silicon germanium devices

(2008) Erich Kasper   APPLIED SURFACE SCIENCE

Equilibrium critical thickness for misfit dislocations in III-nitrides

(2008) David Holec et al.   JOURNAL OF APPLIED PHYSICS