Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate
出版年份 2010 全文链接
标题
Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 208, Issue 1, Pages 195-198
出版商
Wiley
发表日期
2010-09-27
DOI
10.1002/pssa.201026420
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
- (2010) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Optical gain characteristics of staggered InGaN quantum wells lasers
- (2010) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
- Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
- (2009) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
- (2009) Jae-Hyun Ryou et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
- (2009) Hongping Zhao et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
- (2009) H.P. Zhao et al. IET Optoelectronics
- Optical gain in InGaN∕InGaAlN quantum well structures with zero internal field
- (2008) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Type-II InGaN-GaNAs quantum wells for lasers applications
- (2008) Ronald A. Arif et al. APPLIED PHYSICS LETTERS
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
- (2008) Ronald A Arif et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Optical and microstructural studies of atomically flat ultrathin In-rich InGaN∕GaN multiple quantum wells
- (2008) Soon-Yong Kwon et al. JOURNAL OF APPLIED PHYSICS
- Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
- (2008) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
- Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm
- (2008) Hongping Zhao et al. OPTICAL AND QUANTUM ELECTRONICS
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