Structure and strain relaxation effects of defects in InxGa1−xN epilayers

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

(2013) T. Li et al.   APPLIED PHYSICS LETTERS

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

(2013) Fabrice Oehler et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

(2013) F. C.-P. Massabuau et al.   JOURNAL OF APPLIED PHYSICS

Mg Doping Affects Dislocation Core Structures in GaN

(2013) S. K. Rhode et al.   PHYSICAL REVIEW LETTERS

Phase separation and atomic ordering in mixed III nitride layers

(2013) S. Mahajan   SCRIPTA MATERIALIA

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

(2013) E Taylor et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The effect of dislocations on the efficiency of InGaN/GaN solar cells

(2013) Y. Zhang et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

(2012) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

Properties of trench defects in InGaN/GaN quantum well structures

(2012) S.-L. Sahonta et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

(2011) F. Y. Meng et al.   JOURNAL OF APPLIED PHYSICS

Dislocation movement in GaN films

(2010) M. A. Moram et al.   APPLIED PHYSICS LETTERS

Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy

(2009) Th. Kehagias et al.   APPLIED PHYSICS LETTERS

On the origin of threading dislocations in GaN films

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

(2009) I. Yonenaga et al.   PHYSICA B-CONDENSED MATTER

Stacking faults in quaternary InxAlyGa1−x−yN layers

(2008) F.Y. Meng et al.   ACTA MATERIALIA

The influence of coalescence time on unintentional doping in GaN/sapphire

(2008) S. Das Bakshi et al.   JOURNAL OF CRYSTAL GROWTH