High-Performance, Air-Stable, Top-Gate, p-Channel WSe2Field-Effect Transistor with Fluoropolymer Buffer Layer

标题
High-Performance, Air-Stable, Top-Gate, p-Channel WSe2Field-Effect Transistor with Fluoropolymer Buffer Layer
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 25, Issue 46, Pages 7208-7214
出版商
Wiley
发表日期
2015-10-24
DOI
10.1002/adfm.201502008

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