Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

(2019) Bing Song et al.   Nanomaterials

Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory

(2019) Po-Hsun Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of barrier layer on HfO2-based conductive bridge random access memory

(2019) Chun-An Lin et al.   APPLIED PHYSICS LETTERS

Improvement of memristive properties in CuO films with a seed Cu layer

(2019) Tie-Dong Cheng et al.   APPLIED PHYSICS LETTERS

Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film

(2019) Changhong Yang et al.   ACS Applied Materials & Interfaces

Latent Fingerprint Imaging Using Dy and Sm Codoped HfO 2 Nanophosphors: Structure and Luminescence Properties

(2019) Sandeep Kumar et al.   PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION

Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties

(2019) Viviana Figà et al.   OPTICAL MATERIALS

Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

(2018) Andrey Sergeevich Sokolov et al.   APPLIED SURFACE SCIENCE

Highly uniform switching of HfO 2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage

(2018) Meng Qi et al.   APPLIED SURFACE SCIENCE

Interface engineering of ALD HfO 2 -based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

(2018) Boncheol Ku et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Oxygen vacancy chain and conductive filament formation in hafnia

(2018) Kan-Hao Xue et al.   JOURNAL OF APPLIED PHYSICS

Transient and Flexible Polymer Memristors Utilizing Full-Solution Processed Polymer Nanocomposites

(2018) Juqing Liu et al.   Nanoscale

Forming-free sol-gel ZrOx resistive switching memory

(2018) Chih-Chieh Hsu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Reflection coefficient of HfO2-based RRAM in different resistance states

(2018) T. H. Nguyen et al.   APPLIED PHYSICS LETTERS

Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate

(2018) Zuoao Xiao et al.   APPLIED PHYSICS LETTERS

Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

(2018) Xiaodi Wei et al.   JOURNAL OF ALLOYS AND COMPOUNDS

A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_x$ Bilayer Structure

(2018) Haili Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An optoelectronic resistive switching memory behavior of Ag/α-SnWO 4 /FTO device

(2016) Pengde Han et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

(2016) Meiyun Zhang et al.   Nanoscale Research Letters

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

(2016) Meiyun Zhang et al.   Nanoscale Research Letters

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

(2015) Andrea Padovani et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

(2015) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

(2015) Samuel R Bradley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

(2015) Yuehua Dai et al.   AIP Advances

The role of oxygen plasma in the formation of oxygen defects in HfOx films deposited at room temperature

(2015) Mochamad Januar et al.   Journal of Materials Chemistry C

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

(2015) Ee Lim et al.   Electronics

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

A Flexible Solution-Processed Memristor

(2009) N. Gergel-Hackett et al.   IEEE ELECTRON DEVICE LETTERS